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| SCA-005C Silicon PIN Photodiode Data Sheet Description The SCA-005C is a high sensitive silicon PIN photodiode for use in low light applications across the spectral range of 320nm to 1100 nm. This N-type photodiode offers high speed, low capacitance, and high breakdown voltage characteristics. The standard version of model SCA-005C is housed in a hermetically sealed 2 pin TO-5 metal case. It is also available in custom packages and in chip form for hybrid circuit boards. This device is capable of meeting MIL-PRF-19500 requirements for environmental integrity and reliability. Applications * * * * * Medical Analytical Instruments Optical Power Meters Densitometers Radiometers Optical Spectroscopy Features * Photoconductive or Photovoltaic Regime * High-Reliability Hermetic Package * Available in Chip Form * Spectral Response from 320 to 1100nm Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900. * * * * Low Dark Current Low Total Capacitance Fast Rise Time High Responsivity Absolute Maximum Ratings Parameter Operation Temperature Storage Temperature Reverse Voltage Symbol TOP TSTG VR Rating -50 to +120 -55 to +150 100 Unit O O C C V Copyright 2003 Rev. 3.1 Semico. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 3 www.SEMICOA.com SCA-005C Silicon PIN Photodiode Data Sheet DEVICE CHARACTERISTICS characteristics specified at TA = 25C Mechanical Characteristics Active Diameter Active Area d A 0.10 5.1 Inches mm2 Optical Characteristics Spectral Response Peak Sensitive Wavelength p 320 to 1100 950 nm nm Electrical Characteristics Parameter Dark Current Responsivity Risetime Capacitance Reverse Breakdown Voltage Forward Voltage Shunt Resistance Series Resistance Noise Equivalent Power Symbol ID R tr Cj VBR VF Rsh RS NEP Test Conditions VR = 1 mV VR = 25 V = 900 nm = 830 nm = 632 nm VR = 25 V, RL = 50 VR = 25 V, f = 1 MHz IR = 10 A IF = 1 mA VR = 1 mV IF = 10 mA Min Typ 0.002 0.5 0.62 0.57 0.35 10 10 100 0.5 200 7.0 2x10-14 Max 2.0 50 Units nA A/W 20 15 1.0 15.0 ns pF V V M W/Hz 0.5 0.45 0.25 50 10 Package Specifications Bottom View CATHODE/ CASE - 2 O0.200 (5.08) 1 2 Hole Size: 0.025 (0.64) Annular Ring: 0.015 (0.38) ANODE - 1 0.500 (12.70) 0.170 (4.32) O0.355 (9.02) O0.320 (8.13) O0.250 (6.35) W INDOW 0.018 (0.47) PIN DIAMETER 0.080 (2.03) Copyright 2003 Rev. 3.1 Semico. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 3 www.SEMICOA.com SCA-005C Silicon PIN Photodiode Data Sheet all curves at TA = 25C unless otherwise specified CHARACTERISTIC CURVES 0.7 120 R - Responsivity (A/W) 0.6 0.5 0.4 0.3 0.2 0.1 0 400 Cj - Capacitance (pF) 600 800 1000 1200 100 80 60 40 20 0 0 10 20 30 40 50 - Wavelength (nm) VR - Reverse Voltage (Volts) Figure 1 Responsivity vs Wavelength ID - Reverse Dark Current (nA) 1000 100 10 1 0.1 0.01 0.001 20 30 40 50 60 O Figure 2 Capacitance vs Reverse Voltage 1 000 ID - Reverse Dark Current (nA) VR = 25 V T = 85 C T = 50 C 1 00 1 0 1 0.1 0.01 0.001 0.00001 T = 25 C VR = 0 V 70 80 90 0.001 0.1 1 0 1 000 T - Temperature ( C) VR - Reverse Voltage (Volts) Figure 3. Reverse Current vs Temperature 1 000 Figure 4. Reverse Current vs Reverse Voltage 1.E-12 IL - Output Light Current (uA) NEP - Noise Equivalent Power 1 00 1 0 1 0.1 0.01 0.001 T = 85 C (W/Hz ) T = 50 C 1.E-13 1/2 T = 25 C 1.E-14 0.01 0.1 1 1 0 1 00 Ee - Radiation Flux @ 950 nm (mW/cm 2 ) 0.0001 0.001 0.01 0.1 1 10 100 VR - Reverse Voltage (Volts) Figure 5. Light Current vs Irradiance @ = 950 nm Figure 6 Noise Equivalent Power vs Reverse Voltage Specifications are subject to change without notice. Please consult the website or factory for current information. Copyright 2003 Rev. 3.1 Semico. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 3 of 3 www.SEMICOA.com |
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